Finwave Semiconductor is shaping the future through a new breakthrough transistor designed to optimize the potential of Gallium Nitride (GaN). Finwave’s advanced 3DGaN™ technology is the discovery of prominent MIT innovators who are focused on bringing the true potential of GaN to key industries including 5G, AI, cloud computing, and EV and autonomous vehicles. Creators of the first GaN FinFETs fabricated with 8” silicon CMOS tools, Finwave’s mmWave power amplifier technology is poised to serve as a catalyst of change to unlock the true potential of 5G communications.
Finwave Semiconductor
